Product Summary

The AP3310GHis an advanced power MOSFET from APEC with simple drive requirement and 2.5v gate drive capability. It provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. This device is suited for low voltage and lower power applications. Its drain-source voltage is -20v.

Parametrics

Absolute maximum ratings: (1)VDS, Drain-Source Voltage:-20v; (2)VGS, Gate-Source Voltage:± 12v; (3)ID@TC=25℃, Continuous Drain Current, VGS @ 10V: -10 A; (4)ID@TC=100℃, Continuous Drain Current, VGS @ 10V: -6.2 A; (5)IDM, Pulsed Drain Current: -24A; (6)PD@TC=25℃, Total Power Dissipation:15.6W; (7)TSTG, Storage Temperature Range: -55 to 150℃; (8)TJ, Operating Junction Temperature Range: -55 to 150℃.

Features

Features: (1)Simple Drive Requirement; (2)2.5V Gate Drive Capability; (3)Fast Switching Characteristic.

Diagrams

AP331AWG-7
AP331AWG-7
Diodes Inc.
Comparator ICs 2V-36V 2.5mA 2V-36V 2.5mA
Data Sheet
0-1: $0.28
1-10: $0.20
10-100: $0.15
100-250: $0.13
AP331AWRG-7
AP331AWRG-7
Diodes Inc.
Comparator ICs 2V-36V 2.5mA 2V-36V 2.5mA
Data Sheet
0-1: $0.28
1-10: $0.20
10-100: $0.15
100-250: $0.13
AP331AWR
AP331AWR
Other

Data Sheet
Negotiable 
AP331A
AP331A
Other

Data Sheet
Negotiable