Product Summary
The SIR172DP-T1-GE3 is an N-Channel 30-V (D-S) MOSFET. It is suitable for Notebook CPU Core- High-Side Switch.
Parametrics
SIR172DP-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage:30V; (2)Gate-Source Voltage:± 20V; (3)Operating Junction and Storage Temperature Range: -55 to 150℃; (4)Soldering Recommendations (Peak Temperature):260℃.
Features
SIR172DP-T1-GE3 features: (1)Halogen-free According to IEC 61249-2-21 Definition ; (2)TrenchFET Power MOSFET; (3)Low Thermal Resistance PowerPAK? Package with Low 1.07 mm; (4)Profile; (5)Optimized for High-Side Synchronous Rectifier Operation; (6)100 % Rg and UIS Tested; (7)Compliant to RoHS Directive 2002/95/EC.
Diagrams
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![]() SIR172DP-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 30V 20A 29.8W 8.9mohm @ 10V |
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![]() SIR12-21C/TR8 |
![]() Everlight |
![]() Infrared Emitters Infrared LED |
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![]() SIR12-21C-TR8 |
![]() Other |
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![]() Negotiable |
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![]() SIR15-21C-TR8 |
![]() Other |
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![]() Negotiable |
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![]() SiR158DP |
![]() Other |
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![]() Negotiable |
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![]() SIR158DP-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 30V 60A 83W 1.8mohm @ 10V |
![]() Data Sheet |
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![]() SiR164DP |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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