Product Summary
The RJK0394DPA is a Silicon N Channel Power MOS FET.
Parametrics
RJK0394DPA absolute maximum ratings: (1)Drain to source breakdown voltage:30V; (2)Gate to source leak current:± 0.1μA; (3)Zero gate voltage drain current:1μA; (4)Gate to source cutoff voltage:1.2 to 2.5V; (5)Forward transfer admittance:65S; (6)Input capacitance:1110pF; (7)Output capacitance:160pF; (8)Reverse transfer capacitance:80pF; (9)Gate Resistance:2.5Ω; (10)Total gate charge:7.4nC; (11)Gate to source charge:3.2nC; (12)Gate to drain charge:1.9nC; (13)Turn-on delay time:8.8ns; (14)Rise time:4ns; (15)Turn-off delay time:36ns; (16)Fall time:5.1ns.
Features
RJK0394DPA features: (1)High speed switching; (2)Capable of 4.5 V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance RDS(on) = 7.8 mΩ typ. (at VGS = 10 V); (6)Pb-free ; (7)Halogen-free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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RJK0394DPA-00#J53 |
MOSFET N-CH 30V 35A W-PAK |
Data Sheet |
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RJK0394DPA-00#J5A |
MOSFET N-CH 30V 35A 2WPACK |
Data Sheet |
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