RJK0397DPA

RJK0397DPA, Silicon N Channel Power MOS FET, WPAK, 4.5V

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Price:: US $0.95~2.98 / piece [Get Latest Price]

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	US $0.95~2.98

PartNumber:: RJK0397DPA

Brand:: Renesas Technology Corp - Renesas | Pack: DIP | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-07-16

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Part Number:RJK0397DPA
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Product Summary

The RJK0397DPA is a Silicon N Channel Power MOS FET.

Parametrics

RJK0397DPA absolute maximum ratings: (1)Drain to source breakdown voltage:30V; (2)Gate to source leak current:± 0.1μA; (3)Zero gate voltage drain current:1μA; (4)Gate to source cutoff voltage:1.2 to 2.5V; (5)Forward transfer admittance:95S; (6)Input capacitance:2430pF; (7)Output capacitance:320pF; (8)Reverse transfer capacitance:170pF; (9)Gate Resistance:1.4Ω; (10)Total gate charge:15.5nC; (11)Gate to source charge:7.1nC; (12)Gate to drain charge:3.7nC; (13)Turn-on delay time:13.0ns; (14)Rise time:5.2ns; (15)Turn-off delay time:45ns; (16)Fall time:6.2ns.

Features

RJK0397DPA features: (1)High speed switching; (2)Capable of 4.5 V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance RDS(on) = 4.1 mΩ typ. (at VGS = 10 V); (6)Pb-free ; (7)Halogen-free.