Product Summary
The AOD425 is a P-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The AOD425 is ESD protected.
Parametrics
AOD425 absolute maximum ratings: (1)Continuous Drain Current: -50A; (2)Pulsed Drain Current: -70A; (3)Gate-Source Voltage:±25V; (4)Drain-Source Voltage:-30V; (5)Junction and Storage Temperature Range:-55 to 175℃.
Features
AOD425 absolute maximum ratings: (1)Continuous Drain Current: -50A; (2)Pulsed Drain Current: -70A; (3)Gate-Source Voltage:±25V; (4)Drain-Source Voltage:-30V; (5)Junction and Storage Temperature Range:-55 to 175℃.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AOD425 |
MOSFET P CH 30V 50A TO252 |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AOD400 |
Other |
Data Sheet |
Negotiable |
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AOD402 |
Other |
Data Sheet |
Negotiable |
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AOD403 |
MOSFET P-CH -30V -85A TO-252 |
Data Sheet |
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AOD404 |
Other |
Data Sheet |
Negotiable |
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AOD405 |
Other |
Data Sheet |
Negotiable |
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AOD405L |
Other |
Data Sheet |
Negotiable |
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