Product Summary
The AOD425 is a P-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The AOD425 is ESD protected.
Parametrics
AOD425 absolute maximum ratings: (1)Continuous Drain Current: -50A; (2)Pulsed Drain Current: -70A; (3)Gate-Source Voltage:±25V; (4)Drain-Source Voltage:-30V; (5)Junction and Storage Temperature Range:-55 to 175℃.
Features
AOD425 absolute maximum ratings: (1)Continuous Drain Current: -50A; (2)Pulsed Drain Current: -70A; (3)Gate-Source Voltage:±25V; (4)Drain-Source Voltage:-30V; (5)Junction and Storage Temperature Range:-55 to 175℃.
Diagrams
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![]() AOD425 |
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![]() MOSFET P CH 30V 50A TO252 |
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![]() AOD400 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() AOD402 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() AOD403 |
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![]() MOSFET P-CH -30V -85A TO-252 |
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![]() AOD404 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() AOD405 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() AOD405L |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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