Product Summary

The Si7720DN-T1-GE3 is an N-Channel 30-V (D-S) MOSFET. The applications of it are Notebook PC- System Power, Buck Converter, Synchronous Rectifier.

Parametrics

Si7720DN-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current (TJ = 150 °C):12A; (4)Pulsed Drain Current:50A; (5)Continuous Source-Drain Diode Current:12A; (6)Single Pulse Avalanche Current:20A; (7)Single Pulse Avalanche Energy: 20mJ; (8)Maximum Power Dissipation:52W; (9)Operating Junction and Storage Temperature Range:- 50 to 150°C; (10)Soldering Recommendations (Peak Temperature):260°C.

Features

Si7720DN-T1-GE3 features: (1)Halogen-free; (2)SkyFET Monolithic TrenchFET Power MOSFET and Schottky Diode; (3)Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile; (4)100 % Rg Tested; (5)100 % UIS Tested.

Diagrams

Si7720DN-T1-GE3 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI7720DN-T1-GE3
SI7720DN-T1-GE3

Vishay/Siliconix

MOSFET 30V 12A 52W 12.5mohm @ 10V

Data Sheet

0-2210: $0.52
2210-3000: $0.50
3000-6000: $0.49
6000-12000: $0.47
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI7703EDN-T1
SI7703EDN-T1

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W

Data Sheet

Negotiable 
SI7703EDN-T1-E3
SI7703EDN-T1-E3

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W

Data Sheet

0-1580: $0.48
1580-3000: $0.39
3000-6000: $0.36
6000-12000: $0.35
SI7703EDN-T1-GE3
SI7703EDN-T1-GE3

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V

Data Sheet

0-1: $0.96
1-10: $0.76
10-100: $0.68
100-250: $0.59
Si7705DN
Si7705DN

Other


Data Sheet

Negotiable 
SI7705DN-T1
SI7705DN-T1

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W

Data Sheet

Negotiable 
Si7716ADN
Si7716ADN

Other


Data Sheet

Negotiable