Product Summary
The Si7720DN-T1-GE3 is an N-Channel 30-V (D-S) MOSFET. The applications of it are Notebook PC- System Power, Buck Converter, Synchronous Rectifier.
Parametrics
Si7720DN-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current (TJ = 150 °C):12A; (4)Pulsed Drain Current:50A; (5)Continuous Source-Drain Diode Current:12A; (6)Single Pulse Avalanche Current:20A; (7)Single Pulse Avalanche Energy: 20mJ; (8)Maximum Power Dissipation:52W; (9)Operating Junction and Storage Temperature Range:- 50 to 150°C; (10)Soldering Recommendations (Peak Temperature):260°C.
Features
Si7720DN-T1-GE3 features: (1)Halogen-free; (2)SkyFET Monolithic TrenchFET Power MOSFET and Schottky Diode; (3)Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile; (4)100 % Rg Tested; (5)100 % UIS Tested.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI7720DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 12A 52W 12.5mohm @ 10V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SI7703EDN-T1 |
Vishay/Siliconix |
MOSFET 20V 6.3A 2.8W |
Data Sheet |
Negotiable |
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SI7703EDN-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 6.3A 2.8W |
Data Sheet |
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SI7703EDN-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V |
Data Sheet |
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Si7705DN |
Other |
Data Sheet |
Negotiable |
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SI7705DN-T1 |
Vishay/Siliconix |
MOSFET 20V 6.3A 2.8W |
Data Sheet |
Negotiable |
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Si7716ADN |
Other |
Data Sheet |
Negotiable |
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